@article {Simserides1996L421, title = {Looking for the maximum low-temperature conductivity in selectively doped AlxGa1-xAs-GaAs-AlxGa1-xAs double heterojunctions}, journal = {Journal of Physics Condensed Matter}, volume = {8}, number = {30}, year = {1996}, note = {cited By 8}, pages = {L421-L426}, abstract = {We use self-consistent numerical calculations to study the sheet electron
concentration and the mobility as functions of the doping concentration, the spacer thickness,
the well width and the Al mole fraction of a selectively doped AlxGa1-xAs/GaAs/AlxGa1-xAs
double heterojunction, using no arbitrary, a priori, assumptions, at low temperatures.For the first
time we take into account two kinds of donor (shallow and deep) that coexist in the Si-doped
AlxGa1-xAs. We study all the significant scattering mechanisms. The model, based exclusively
upon the knowledge of the material and structural parameters involved, allows us to obtain the
maximum conductivity for any specific structure. Our results are in a very good agreement with
experiment.}, doi = {10.1088/0953-8984/8/30/002}, url = {https://iopscience.iop.org/article/10.1088/0953-8984/8/30/002}, author = {Simserides, C.D. and Triberis, G.P.} }