@article {Simserides19956317,
	title = {A study on the temperature dependence of the quasi-two-dimensional electron concentration and mobility in AlxGa1-xAs/GaAs selectively doped heterostructures},
	journal = {Journal of Physics: Condensed Matter},
	volume = {7},
	number = {31},
	year = {1995},
	note = {cited By 6},
	pages = {6317-6326},
	abstract = {We present a quantitative analysis of the temperature dependence of the quasi-two-dimensional electron concentration in Al<sub>x</sub>Ga<sub>1-x</sub>As/GaAs heterostructures taking into account the fact that in the bulk Si-doped Al<sub>x</sub>Ga<sub>1-x</sub>As two types of donor coexist, i.e. deep and shallow, which independently, and by different mechanisms, provide electrons to the bulk Al<sub>x</sub>Ga<sub>1-x</sub>As different conduction band minima and to the quasi-two-dimensional electron gas (Q2DEG). We calculate the electronic states, the ionized-donor concentrations, the Q2DEG and the bulk-electron concentrations and the corresponding mobilities as a function of temperature. Our numerical results are in very good agreement with the experimental data.},
	doi = {10.1088/0953-8984/7/31/014},
	url = {https://iopscience.iop.org/article/10.1088/0953-8984/7/31/014},
	author = {Simserides, C.D. and Triberis, G.P.}
}
