@article {Simserides19936437,
	title = {A systematic study of electronic states in n-AlxGa 1-xAs/GaAs/n-AlxGa1-xAs selectively doped double-heterojunction structures},
	journal = {Journal of Physics: Condensed Matter},
	volume = {5},
	number = {35},
	year = {1993},
	note = {cited By 31},
	pages = {6437-6446},
	abstract = {The electron concentration, the wavefunctions and the energy levels of a n-Al<sub>x</sub>Ga<sub>1-x</sub>As/GaAs/n-Al<sub>x</sub>Ga<sub>1-x</sub>As double heterojunction are evaluated by solving Schrodinger and Poisson equations self-consistently. The authors investigate, at zero temperature, the dependence of the sheet electron concentration, and the subband populations on the well width, spacer thickness and doping concentrations, for Al mole fraction x=0.3. They give physical interpretations of some interesting characteristics observed. The transition from a {\textquoteright}perfect{\textquoteright} square well to a system of {\textquoteright}two separated heterojunctions{\textquoteright} is systematically studied. The results are in excellent agreement with previous experiments.},
	doi = {10.1088/0953-8984/5/35/009},
	url = {https://iopscience.iop.org/article/10.1088/0953-8984/5/35/009},
	author = {Simserides, C.D. and Triberis, G.P.}
}
