@article {Simserides1993277,
	title = {On the temperature dependence of the electronic states and the mobility in AlGaAs/GaAs heterostructures},
	journal = {Superlattices and Microstructures},
	volume = {14},
	number = {4},
	year = {1993},
	note = {cited By 1},
	pages = {277},
	abstract = {Experiment shows that in AlGaAs/GaAs heterostructures the sheet electron concentration remains almost constant up to a certain temperature, while it increases at higher temperatures. We attempt an interpretation of this temperature dependence, taking into account the fact that in the bulk, n-AlGaAs deep and shallow donors exist, which independently and by different mechanisms provide electrons to the different conduction band minima of the bulk n-AlGaAs, and contribute to the formation of the Q2DEG. We calculate the electronic states of this structure, the Q2DEG and the bulk concentrations, and the corresponding mobilities as a function of temperature. Our numerical results are in an excellent agreement with experimental data.},
	doi = {10.1006/spmi.1993.1139},
	url = {https://www.sciencedirect.com/science/article/pii/S0749603683711390?via\%3Dihub},
	author = {Simserides, C.D. and Triberis, G.P.}
}
