<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Simserides, C.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Magnetization and magnetic phases of conduction-band dilute-magnetic- semiconductor quantum wells with non-step-like density of states</style></title><secondary-title><style face="normal" font="default" size="100%">International Journal of Modern Physics B</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2004</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.worldscientific.com/doi/abs/10.1142/S0217979204027384</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">27-29</style></number><volume><style face="normal" font="default" size="100%">18</style></volume><pages><style face="normal" font="default" size="100%">3745-3748</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">We study the magnetization and the magnetic phases of II-VI-based n-doped non-magnetic-semiconductor (NMS) / narrow to wide dilute-magnetic-semiconductor (DMS) / n-doped NMS quantum wells under in-plane magnetic field. The parallel magnetic field is used as a tool, in order to achieve non-step-like density of states in these -appropriate for conduction-band spintronics- structures.</style></abstract><notes><style face="normal" font="default" size="100%">cited By 2</style></notes></record></records></xml>