@article { ISI:000233603500094,
	title = {Half-metallic ferromagnets for magnetic tunnel junctions by ab initio calculations},
	journal = {PHYSICAL REVIEW B},
	volume = {72},
	number = {17},
	year = {2005},
	month = {NOV},
	pages = {174428},
	abstract = {Using theoretical arguments, we show that, in order to exploit half-metallic ferromagnets in tunneling magnetoresistance (TMR) junctions, it is crucial to eliminate interface states at the Fermi level within the half-metallic gap; contrary to this, no such problem arises in giant magnetoresistance elements. Moreover, based on an a priori understanding of the electronic structure, we propose an antiferromagnetically coupled TMR element based on half-metallic zinc-blende chalcogenides, in which interface states are eliminated, as a paradigm of materials design from first principles. Our conclusions are supported by ab initio calculations.},
	issn = {2469-9950},
	doi = {10.1103/PhysRevB.72.174428},
	author = {P. Mavropoulos and Lezaic, M. and Blugel, S}
}
