@article { ISI:000177338400074,
	title = {Ballistic spin injection and detection in Fe/semiconductor/Fe junctions},
	journal = {PHYSICAL REVIEW B},
	volume = {66},
	number = {2},
	year = {2002},
	month = {JUL 1},
	pages = {024416},
	abstract = {We present ab initio calculations of the spin-dependent electronic transport in Fe/GaAs/Fe and Fe/ZnSe/Fe (001) junctions simulating the situation of a spin-injection experiment. We follow a ballistic Landauer-Buttiker approach for the calculation of the spin-dependent dc conductance in the linear-response regime, in the limit of zero temperature. We show that the bulk band structure of the leads and of the semiconductor, and even more the electronic structure of a clean and abrupt interface, are responsible for a current polarization and a magnetoresistance ratio of almost the ideal 100\%, if the transport is ballistic. In particular, we study the significance of the transmission resonances caused by the presence of two interfaces.},
	issn = {2469-9950},
	doi = {10.1103/PhysRevB.66.024416},
	author = {P. Mavropoulos and Wunnicke, O and P.H. Dederichs}
}
