<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">P. Mavropoulos</style></author><author><style face="normal" font="default" size="100%">Lezaic, M.</style></author><author><style face="normal" font="default" size="100%">Blugel, S</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Half-metallic ferromagnets for magnetic tunnel junctions by ab initio calculations</style></title><secondary-title><style face="normal" font="default" size="100%">PHYSICAL REVIEW B</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2005</style></year><pub-dates><date><style  face="normal" font="default" size="100%">NOV</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">17</style></number><volume><style face="normal" font="default" size="100%">72</style></volume><pages><style face="normal" font="default" size="100%">174428</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">Using theoretical arguments, we show that, in order to exploit half-metallic ferromagnets in tunneling magnetoresistance (TMR) junctions, it is crucial to eliminate interface states at the Fermi level within the half-metallic gap; contrary to this, no such problem arises in giant magnetoresistance elements. Moreover, based on an a priori understanding of the electronic structure, we propose an antiferromagnetically coupled TMR element based on half-metallic zinc-blende chalcogenides, in which interface states are eliminated, as a paradigm of materials design from first principles. Our conclusions are supported by ab initio calculations.</style></abstract></record></records></xml>