# Publications by Year: 2000

Complex band structure and tunneling through ferromagnet/insulator/ferromagnet junctions. PHYSICAL REVIEW LETTERS. 2000;85:1088-1091.Abstract

. 2000

Mavropoulos P, Papanikolaou N, Dederichs PH. Complex band structure and tunneling through ferromagnet/insulator/ferromagnet junctions. PHYSICAL REVIEW LETTERS. 2000;85:1088-1091.Abstract

We investigate the importance of metal-induced gap states for the tunneling of metal electrons through epitaxial insulator films. By introducing an imaginary part kappa to the wave vector in order to describe the decay of the wave function in the insulator, we obtain the complex band structure in the gap region. The spectrum of the decay parameters kappa is calculated for the semiconductors Si, Ge, GaAs, and ZnSe. in most cases, for large enough film thicknesses the tunneling is dominated by states of normal incidence on the interface. Possible exceptions are considered. Based on our conclusions, we discuss the spin-dependent tunneling in Fe/semiconductor/Fe (001) junctions.

Department of Physics

National and Kapodistrian University of Athens

University Campus

GR-157 84 Zografou, Athens

Tel.: (+30) 210 7276893

E-mail: fmavrop@phys.uoa.gr

- Strong spin-orbit torque effect on magnetic defects due to topological surface state electrons in Bi2Te3
- Ab Initio Theory of Fourier-Transformed Quasiparticle Interference Maps and Application to the Topological Insulator Bi2Te3
- Ab initio analysis of magnetic properties of the prototype B20 chiral magnet FeGe