@article {Balis20183216,
	title = {Triazine-Substituted Zinc Porphyrin as an Electron Transport Interfacial Material for Efficiency Enhancement and Degradation Retardation in Planar Perovskite Solar Cells},
	journal = {ACS Applied Energy Materials},
	volume = {1},
	number = {7},
	year = {2018},
	note = {cited By 17},
	pages = {3216-3229},
	abstract = {Motivated by the excellent electron-transfer capability of porphyrin molecules in natural photosynthesis, we introduce here the first application of a porphyrin compound to improve the performance of planar perovskite solar cells. The insertion of a thin layer consisting of a triazine-substituted Zn porphyrin between the TiO2 electron transport layer and the CH3NH3PbI3 perovskite film significantly augmented electron transfer toward TiO2 while also sufficiently improved the morphology of the perovskite film. The devices employing porphyrin-modified TiO2 exhibited a significant increase in the short-circuit current densities and a small increase in the fill factor. As a result, they delivered a maximum power conversion efficiency (PCE) of 16.87\% (average 14.33\%), which represents a 12\% enhancement compared to 15.01\% (average 12.53\%) of the reference cell. Moreover, the porphyrin-modified cells exhibited improved hysteretic behavior and a higher stabilized power output of 14.40\% compared to 10.70\% of the reference devices. Importantly, nonencapsulated perovskite solar cells embedding a thin porphyrin interlayer showed an elongated lifetime retaining 86\% of the initial PCE after 200 h, while the reference devices exhibited higher efficiency loss due to faster decomposition of CH3NH3PbI3 to PbI2. {\textcopyright} 2018 American Chemical Society.},
	doi = {10.1021/acsaem.8b00447},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-85064612107\&doi=10.1021\%2facsaem.8b00447\&partnerID=40\&md5=1334d491654bc544939d4f9bd6f8cf79},
	author = {Balis, N. and Verykios, A. and Soultati, A. and Constantoudis, V. and Papadakis, M. and Kournoutas, F. and Drivas, C. and Skoulikidou, M.-C. and Gardelis, S. and Fakis, M. and Kennou, S. and A. G. Kontos and Coutsolelos, A.G. and P. Falaras and Vasilopoulou, M}
}
