@article {Gardelis2013,
	title = {A silicon-wafer based p-n junction solar cell by aluminum-induced recrystallization and doping},
	journal = {Applied Physics Letters},
	volume = {103},
	number = {24},
	year = {2013},
	note = {cited By 13},
	abstract = {We fabricated a silicon-wafer based p-n junction solar cell with conversion efficiency of 11\% without conventional doping of the emitter or the use of anti-reflecting coatings. The emitter was originally nanocrystalline, grown on n-type crystalline Si and covered with a thin semi-transparent Al layer. Annealing in nitrogen at 430 {\textdegree}C promoted a simultaneous aluminum (Al)-induced recrystallization and Al-doping of the emitter. The recrystallized emitter consisted of considerably larger Si grains which were epitaxially crystallized on the Si substrate. These two effects led to a considerable improvement of the electrical and photovoltaic properties of the resulting p-n junction. {\textcopyright} 2013 AIP Publishing LLC.},
	doi = {10.1063/1.4846595},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84890475996\&doi=10.1063\%2f1.4846595\&partnerID=40\&md5=55a258a09d1bf6a1d07899cdad315184},
	author = {Gardelis, S. and Nassiopoulou, A.G. and Manousiadis, P. and Vouroutzis, N. and Frangis, N.}
}
