@article {Gardelis20072165,
	title = {Light-emission characteristics of silicon nanocrystals formed by anodization of bulk crystalline silicon in the transition regime},
	journal = {Physica Status Solidi (C) Current Topics in Solid State Physics},
	volume = {4},
	number = {6},
	year = {2007},
	note = {cited By 1},
	pages = {2165-2169},
	abstract = {In this study we report on the light-emission characteristics of Si nanocrystals formed at the initial stages of anodization of bulk crystalline Si in the transition regime using extremely short pulses of anodic current. A considerable enhancement and a red-shift of the photoluminescence (PL) peak of the as-grown films under prolonged laser illumination in atmosphere was observed. Ageing or thermal oxidation in atmosphere at 300 {\textdegree}C caused similar red-shift and significant enhancement of PL relative to the as-grown films. In all cases the enhancement and the red-shift of the PL coincided with the appearance of O2-Si-H2 and O2-Si-H(OH) stretching modes in the Fourier-Transform-Infra-Red (FTIR) absorption spectra. Oxidation in dry oxygen at 900 {\textdegree}C caused red-shift of PL without enhancement. Finally removal of the oxide caused blue shift of PL. All these observations are discussed in the context of the quantum confinement model. {\textcopyright} 2007 WILEY-VCH Verlag GmbH \&amp; Co. KGaA.},
	doi = {10.1002/pssc.200674411},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-44649174735\&doi=10.1002\%2fpssc.200674411\&partnerID=40\&md5=742ae0ba9eb822650d5241773833da8b},
	author = {Gardelis, S. and Nassiopoulou, A.G.}
}
