@article {Androulakis2005293,
	title = {Indium oxide as a possible tunnel barrier in spintronic devices},
	journal = {Thin Solid Films},
	volume = {471},
	number = {1-2},
	year = {2005},
	note = {cited By 16},
	pages = {293-297},
	abstract = {We report the growth of ultra-thin indium oxide layers using the dc-magnetron sputtering method. We demonstrate that good quality tunnel barriers made of indium oxide can be routinely fabricated and employed in spintronic-related devices. Simple magnetic tunnel junctions (MTJs) were fabricated in a cross geometry using ex situ thermally evaporated cobalt and permalloy. Our best junctions obey the Rowell criteria for tunneling and exhibit a tunnel magnetoresistance of 15\% at 100 K. {\textcopyright} 2004 Elsevier B.V. All rights reserved.},
	doi = {10.1016/j.tsf.2004.06.162},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-10644254582\&doi=10.1016\%2fj.tsf.2004.06.162\&partnerID=40\&md5=d3e5c45f7cb6fd6f7fe7ad7f64590323},
	author = {Androulakis, J. and Gardelis, S. and Giapintzakis, J. and Gagaoudakis, E. and Kiriakidis, G.}
}
