@article {Gardelis20043178,
	title = {Structural, magnetic, and electrical properties of NiMnSb thin films grown on InSb by pulsed-laser deposition},
	journal = {Applied Physics Letters},
	volume = {85},
	number = {15},
	year = {2004},
	note = {cited By 13},
	pages = {3178-3180},
	abstract = {We report the growth of single-phase, stoichiometric polycrystalline thin films of the half-Heusler ferromagnet NiMnSb, predicted to be half-metallic, on single crystal InSb (100) substrates heated at 200{\textdegree}C by pulsed laser deposition. The films exhibit saturation magnetization of 4 μB/ formula unit at 5 K and coercive fields of 2 Oe at 300 K indicative of their good structural quality. At low temperatures (7\&lt;200 K) the system behaves like a Heisenberg ferromagnet as expected for a half-metal, while at T\&gt;200 K it behaves like an itinerant ferromagnet. The resistivity of the film at 5 K is 6 μΩ cm. {\textcopyright} 2004 American Institute of Physics.},
	doi = {10.1063/1.1807026},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-8644234249\&doi=10.1063\%2f1.1807026\&partnerID=40\&md5=17ceaa77f17d772d574f74b4c04dc697},
	author = {Gardelis, S. and Androulakis, J. and Giapintzakis, J. and Monnereau, O. and Buckle, P.D.}
}
