@article {Branford20042358,
	title = {Large positive magnetoresistance in nonstoichiometric NiMnSb thin films on silicon},
	journal = {Applied Physics Letters},
	volume = {84},
	number = {13},
	year = {2004},
	note = {cited By 22},
	pages = {2358-2360},
	abstract = {The transport properties of pulsed-laser-deposited NiMnSb films on silicon as a function of film thickness were discussed. It was found that a low-temperature upturn was observed in the resistivity for film thicknesses of 130 nm and below. It was observed that as the film thickness decreased, the magnitude of both the resistivity upturn and the magnetoresistance increased. Analysis shows that the evolution of the field dependence of the magnetoresistance appeared similar to the silver chalcogenides and was indicative of a crossover from hole-dominated to electron-dominated transport as the temperature increased.},
	doi = {10.1063/1.1691172},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-11144355102\&doi=10.1063\%2f1.1691172\&partnerID=40\&md5=f312f3b3a3e8686afbb9c001eb5ece1a},
	author = {Branford, W.R. and Clowes, S.K. and Syed, M.H. and Bugoslavsky, Y.V. and Gardelis, S. and Androulakis, J. and Giapintzakis, J. and Grigorescu, C.E.A. and Berenov, A.V. and Roy, S.B. and Cohen, L.F.}
}
