@article {Smith2003195,
	title = {Realization of quantum-dot cellular automata using semiconductor quantum dots},
	journal = {Superlattices and Microstructures},
	volume = {34},
	number = {3-6},
	year = {2003},
	note = {cited By 29},
	pages = {195-203},
	abstract = {We demonstrate that a quantum-dot cellular automata device can be fabricated using electron beam lithographically defined gates on GaAs/AlGaAs heterostructure materials, and that by tuning the four quantum dot (J. Phys. C: Solid State Phys. 21 (1988) L893) system polarization of one double dot can lead to polarization in the neighboring double dot (Phys. Rev. B 67 (2003) 033302). The polarization is detected using a 1-D or 0-D channel defined next to one pair of double dots which acts as a non-invasive voltage probe (Phys. Rev. Lett. 70 (1993) 1311). Ultimately a cellular automata device should be isolated from reservoirs to prevent charge fluctuations caused by co-tunneling. The non-invasive voltage probe is used to show that coupled double dots isolated from reservoirs can be made to have a sharper polarization transition. By studying the broadening of the polarization signal from a coupled double dot system isolated from reservoirs, we deduce the charge dephasing times for intra dot scattering to be more than 0.2~ns (Phys. Rev. B 67 (2003) 073302). {\textcopyright} 2004 Elsevier Ltd. All rights reserved.},
	doi = {10.1016/j.spmi.2004.03.009},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-3242703119\&doi=10.1016\%2fj.spmi.2004.03.009\&partnerID=40\&md5=d1d862e1f1de51ada12c2ca0247c60be},
	author = {Smith, C.G. and Gardelis, S. and Rushforth, A.W. and Crook, R. and Cooper, J. and Ritchie, D.A. and Linfield, E.H. and Jin, Y. and Pepper, M.}
}
