@article {Gardelis2000718,
	title = {Spin-valve effects in a two-dimensional electron gas system},
	journal = {Physica E: Low-Dimensional Systems and Nanostructures},
	volume = {6},
	number = {1},
	year = {2000},
	note = {cited By 2},
	pages = {718-721},
	abstract = {We present results on spin-polarized electron transport from a ferromagnet to a two-dimensional electron gas system (2DEG). The investigated device consists of an injector and a collector contact made from ferromagnetic permalloy thin films with different coercive fields. That allows parallel or antiparallel magnetization of the contacts in different applied magnetic fields. The conducting medium is a 2DEG formed in an AlSb/InAs quantum well. Data from this device suggest that its resistance is controlled by two different types of spin-valve effect: the first is due to the ferromagnet-semiconductor contact resistance, determined by the zero-field spin-splitting in InAs, and the second is due to the propagation of electrons with a spin imbalance through the 2DEG without spin-scattering.},
	doi = {10.1016/S1386-9477(99)00180-0},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0034138526\&doi=10.1016\%2fS1386-9477\%2899\%2900180-0\&partnerID=40\&md5=aff59d0d96710647d45778ce0a037f23},
	author = {Gardelis, S. and Smith, C.G. and Lee, W.Y. and Barnes, C.H.W. and Linfield, E.H. and Ritchie, D.A. and Bland, J.A.C.}
}
