@article {Taskin19952132,
	title = {Sharp 1.54μm luminescence from porous erbium implanted silicon},
	journal = {Electronics Letters},
	volume = {31},
	number = {24},
	year = {1995},
	note = {cited By 19},
	pages = {2132-2133},
	abstract = {Sharp luminescence at 1.54μm from erbium doped porous silicon has been observed. The silicon was made porous after implantation of high doses of erbium and oxygen into p-type Czochralski silicon. The erbium related luminescence from porous silicon is an order of magnitude more intense than that from erbium doped single crystal silicon. {\textcopyright} 1995, IEE. All rights reserved.},
	doi = {10.1049/el:19951439},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0029409384\&doi=10.1049\%2fel\%3a19951439\&partnerID=40\&md5=9fac298327f210d9d6b8d84662a50b57},
	author = {Taskin, T. and Gardelis, S. and Evans, J.H. and Hamilton, B. and Peaker, A.R.}
}
