@article {THEOCHARIS2022114649,
	title = {Impact of dielectric film thickness on field emission in MEMS capacitive switches},
	journal = {Microelectronics Reliability},
	year = {2022},
	pages = {114649},
	abstract = {This study presents experimental evidence of field emission in MEMS capacitive switches. Devices with dielectric layers of silicon nitride of different thicknesses between 50 and 200~nm were investigated by current-voltage (I-V) measurements. These measurements were performed at room temperature and under a controlled atmosphere pressure of 3~{\texttimes}~10-2 mbar at bias levels below breakdown and corresponding electric fields encountered in MEMS capacitive switches during pull-in (1-2~{\texttimes}~106 V/cm). Field emission although was not always clearly observed, it occurred in all devices and clearly manifested at electric fields larger than 106~V/cm.},
	keywords = {Controlled environment, Dielectrics, Electrical characterization, Field emission, MEMS},
	issn = {0026-2714},
	doi = {https://doi.org/10.1016/j.microrel.2022.114649},
	url = {https://www.sciencedirect.com/science/article/pii/S0026271422001731},
	author = {Theocharis, J. and Gardelis, S. and Papaioannou, G.}
}
