@article {THEOCHARIS2025115661,
	title = {Evidence of resistive switching in SiNx thin films for MEMS capacitors: The role of metal contacts},
	journal = {Microelectronics Reliability},
	volume = {168},
	year = {2025},
	pages = {115661},
	abstract = {The impact of metal contacts on the electrical properties of SiN dielectric film in MEMS capacitors is investigated. The investigation is performed employing MIM and MEMS capacitors with Au and Ni contacts. A resistive switching like behaviour is monitored in the case of Ni contacts. This behaviour is attributed to the presence of deep traps in SiN and the effect of different metal contacts as revealed from Thermally Stimulated Depolarization Current (TSDC) assessment. Specifically, TSDC showed that the resistive switching is a contact/interface dominated effect.},
	keywords = {200~nm), 50~nm, Charge trapping, Current-voltage (I-V) characteristics, Dielectric charging, Dielectric film thickness (e.g., Electrode material impact, Field emission current, Fowler-Nordheim Tunneling, Hopping transport mechanism, Interfacial polarization, MEMS capacitive switches, Metal contacts, Resistive switching, SiN dielectric films, SiNx thin films, Thermally Stimulated Depolarization Current (TSDC)},
	issn = {0026-2714},
	doi = {https://doi.org/10.1016/j.microrel.2025.115661},
	url = {https://www.sciencedirect.com/science/article/pii/S0026271425000745},
	author = {Theocharis, J. and Gardelis, S. and Papaioannou, G.}
}
