Phase diagram and critical behavior of the random ferromagnet Ga1 -xMnxN

Citation:

Stefanowicz S, Kunert G, Simserides C, Majewski JA, Stefanowicz W, Kruse C, Figge S, Li T, Jakieła R, Trohidou KN, et al. Phase diagram and critical behavior of the random ferromagnet Ga1 -xMnxN. Physical Review B - Condensed Matter and Materials Physics [Internet]. 2013;88:081201(R).

Abstract:

Molecular beam epitaxy has been employed to obtain Ga1xMnxN films with x up to 10% and Curie temperatures TC up to 13 K. The magnitudes of TC and their dependence on x, TC(x)xm, where m=2.2±0.2, are quantitatively described by a tight-binding model of superexchange interactions and Monte Carlo simulations of TC. The critical behavior of this dilute magnetic insulator shows strong deviations from the magnetically clean case (x=1), in particular, (i) an apparent breakdown of the Harris criterion, (ii) a nonmonotonic crossover in the values of the susceptibility critical exponent γeff between the high temperature and critical regimes, and (iii) a smearing of the critical region, which can be explained either by the Griffiths effects or by macroscopic inhomogeneities in the spin distribution with a variance Δx=(0.2±0.1)%.

Notes:

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