Abstract:

The electron concentration, the wavefunctions and the energy levels of a n-Al_xGa_1-xAs/GaAs/n-Al_xGa_1-xAs double heterojunction are evaluated by solving Schrodinger and Poisson equations self-consistently. The authors investigate, at zero temperature, the dependence of the sheet electron concentration, and the subband populations on the well width, spacer thickness and doping concentrations, for Al mole fraction x=0.3. They give physical interpretations of some interesting characteristics observed. The transition from a 'perfect' square well to a system of 'two separated heterojunctions' is systematically studied. The results are in excellent agreement with previous experiments.

Notes:

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