We study the magnetization and the magnetic phases of II-VI-based n-doped non-magnetic-semiconductor (NMS) / narrow to wide dilute-magnetic-semiconductor (DMS) / n-doped NMS quantum wells under in-plane magnetic field. The parallel magnetic field is used as a tool, in order to achieve non-step-like density of states in these -appropriate for conduction-band spintronics- structures.

We present the basic steps for the study of the linear near field absorption spectra of semiconductor quantum dots under magnetic field of variable orientation. We show that the application of the magnetic field alone is sufficient to induce -increasing the spot illuminated by the near field probe- interesting features to the absorption spectra.

We examine how an in-plane magnetic field B modifies the density of states (DOS) in narrow-to-wide, conduction-band dilute-magnetic semiconductor quantum wells. We demonstrate that the DOS diverges significantly from the ideal steplike two-dimensional electron gas form and this causes severe changes to the physical properties, e.g., to the spin-subband populations, the internal and free energy, the Shannon entropy, and the in-plane magnetization M. We predict a considerable fluctuation of M in cases of vigorous competition between spatial and magnetic confinement.

We analyze the important changes induced in the density of states of narrow-to-wide conduction-band dilute magnetic semiconductor quantum wells subjected to an in-plane magnetic field, B. We show quantitatively that the DOS diverges significantly from the famous step-like two-dimensional electron gas form, by providing results for many values of B and grades of spatial localization. This introduces changes in the pertinent electronic properties. The self-consistent approach is indispensable and the eigenvalue problem has to be solved for each subband index i, spin σ, and in-plane wave vector, e.g. kx. We can select the appropriate parameters so that the structure is populated by carriers of spin-down or exploit the effect of the depopulation of the higher spin-subbands to eliminate carriers with spin-up.