Erratum: Electronic parameters for charge transfer along DNA (European Physical Journal E (2010) 32 (291) DOI:10.1140/epje/i2010-10650-y)
Citation:
Hawke LGD, Kalosakas G, Simserides C. Erratum: Electronic parameters for charge transfer along DNA (European Physical Journal E (2010) 32 (291) DOI:10.1140/epje/i2010-10650-y). European Physical Journal E [Internet]. 2011;34:118.
In our discussion of electronic parameters for charge (hole or electron) transfer along DNA we have omitted to mention that, regarding the tight-binding description of hole transport, the corresponding tight-binding parameters should be taken with the opposite sign of the calculated on-site energies and transfer hopping integrals. This means that for describing hole transport at the base-pair level, the on-site energies EbpH presented in the second row of table 2 and the hopping transfer integrals tbpH presented in the second column of table 3 should be used with opposite signs in order to provide the tight-binding parameters of eq. (10). Similarly, for describing hole transport at the single-base level, the on-site energies EbH presented in the eleventh row of table 1 and the hopping transfer integrals tbH presentedin the second column of tables 4–7 should be used with opposite signs in order to provide the tight-binding parameters of eq. (13). Moreover, on p. 300, 8 lines below eq. (14), in the calculation of charge transfer hopping parameters the separation between adjacent base-pairs in B-DNA should read 3.4 ̊A, instead of 3.14 ̊A.
