In this study, we developed highly sensitive substrates for Surface-Enhanced-Raman-Scattering (SERS) spectroscopy, consisting of silicon nanowires (SiNWs) decorated by silver nanostructures using single-step Metal Assisted Chemical Etching (MACE). One-step MACE was performed on p-type Si substrates by immersion in AgNO3/HF aqueous solutions resulting in the formation of SiNWs decorated by either silver aggregates or dendrites. Specifically, dendrites were formed during SiNWs’ growth in the etchant solution, whereas aggregates were grown after the removal of the dendrites from the SiNWs in HNO3 aqueous solution and subsequent re-immersion of the specimens in a AgNO3/HF aqueous solution by adjusting the growth time to achieve the desired density of silver nanostructures. The dendrites had much larger height than the aggregates. R6G was used as analyte to test the SERS activity of the substrates prepared by the two fabrication processes. The silver aggregates showed a considerably lower limit of detection (LOD) for SERS down to a R6G concentration of 10−13 M, and much better uniformity in terms of detection in comparison with the silver dendritic structures. Enhancement factors in the range 105–1010 were calculated, demonstrating very high SERS sensitivities for analytic applications.

Tailoring metal oxide photocatalysts in the form of heterostructured photonic crystals has spurred particular interest as an advanced route to simultaneously improve harnessing of solar light and charge separation relying on the combined effect of light trapping by macroporous periodic structures and compositional materials’ modifications. In this work, surface deposition of FeOx nanoclusters on TiO2 photonic crystals is investigated to explore the interplay of slow-photon amplification, visible light absorption, and charge separation in FeOx–TiO2 photocatalytic films. Photonic bandgap engineered TiO2 inverse opals deposited by the convective evaporation-induced coassembly method were surface modified by successive chemisorption-calcination cycles using Fe(III) acetylacetonate, which allowed the controlled variation of FeOx loading on the photonic films. Low amounts of FeOx nanoclusters on the TiO2 inverse opals resulted in diameter-selective improvements of photocatalytic performance on salicylic acid degradation and photocurrent density under visible light, surpassing similarly modified P25 films. The observed enhancement was related to the combination of optimal light trapping and charge separation induced by the FeOx–TiO2 interfacial coupling. However, an increase of the FeOx loading resulted in severe performance deterioration, particularly prominent under UV-Vis light, attributed to persistent surface recombination via diverse defect d-states. © 2021 by the authors. Licensee MDPI, Basel, Switzerland.

We develop ZnO/p-Si photodetectors by ALD deposition of ZnO thin films on laser- microstructured Si, which demonstrate high sensitivity and broadband operation (UV-Vis-NIR), due to increased specific surface area of the heterojunction and increased light absorption.

We report on two-step current-induced effects on the electrical, optical, and structural properties of VO2 films around the Metal–Insulator Transition (MIT) in synergy with ambient temperature (T). Simultaneous electrical resistance and transmittance measurements of VO2 semitransparent thin films as a function of T show that the electric current modifies the MIT that takes place in two steps: an abrupt change that increases upon increasing current, implying the formation of larger metallic domains within the current path, accompanied by a smoother change that follows the temperature change. Resistance measurements of thicker bulk-like VO2 films have been also investigated exhibiting similar two-step behavior. By monitoring the specimen temperature (To) during resistance measurements, we show that the abrupt resistance step, accompanied by instantaneous heating/cooling events, occurs at temperatures lower than TMIT and is attributed to current-induced Joule heating effects. Moreover, by monitoring To during current–voltage measurements, the role of T in the formation of two-step current modified MIT is highlighted. X-ray diffraction with in situ resistance measurements performed for various currents at room temperature as a function of To has shown that the current can cause partially MIT and structural phase transition, leading to an abrupt step of MIT. The formation of a rutile metallic phase of VO2 under high applied currents is clearly demonstrated by micro-Raman measurements. By controlling current in synergy with T below TMIT, the VO2 film can be driven to a two-step current-induced MIT as gradually a larger part of the film is transformed into a rutile metallic phase.. © 2021 Author(s).

VO2 thin films were fabricated by thermal evaporation of V2O5 on quartz and glass and subsequent reduction in nitrogen (N2). This Physical Vapor Deposition (PVD) method resulted in high-quality single phase VO2(M1) films with sharp changes in resistance (3–4 orders of magnitude) and transmittance (40–45%) at λ= 1550 nm accompanied by narrow hysteresis loops (  4–5 K) around the Semiconductor-to-Metal Transition (SMT). © 2021 Elsevier B.V.