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Auger recombination in silicon nanocrystals embedded in SiO 2 wide band-gap lattice

Citation:

Mahdouani M, Bourguiga R, Jaziri S, Gardelis S, Nassiopoulou AG. Auger recombination in silicon nanocrystals embedded in SiO 2 wide band-gap lattice. Physica Status Solidi (A) Applications and Materials Science [Internet]. 2008;205:2630-2634.

Abstract:

We calculate the ground and excited electron and hole levels in spherical Si nanocrystals (quantum dots) embedded within SiO 2 in a multiband effective mass approximation. The obtained energies of electron and hole are used to estimate the Auger Recombination (AR) lifetime in Si Nanocrystals (NCs). The excited electron, excited hole and biexciton AR types are considered. © 2008 WILEY-VCH Verlag GmbH & Co. KGaA.

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