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Magnetization reversal and magnetoresistance in a lateral spin-injection device

Citation:

Lee WY, Gardelis S, Choi B-C, Xu YB, Smith CG, Barnes CHW, Ritchie DA, Linfield EH, Bland JAC. Magnetization reversal and magnetoresistance in a lateral spin-injection device. Journal of Applied Physics [Internet]. 1999;85:6682-6685.

Abstract:

We have investigated the magnetization reversal and magnetoresistance (MR) behavior of a lateral spin-injection device. The device consists of a two-dimensional electron gas (2DEG) system in an InAs quantum well and two ferromagnetic (Ni80Fe20) contacts: an injector (source) and a detector (drain). Spin-polarized electrons are injected from the first contact and propagating through InAs are collected by the second contact. By engineering the shape of the permalloy film distinct switching fields (Hc) from the injector and the collector have been observed by scanning Kerr microscopy and MR measurements. Magneto-optic Kerr effect (MOKE) hysteresis loops demonstrate that there is a range of magnetic field (20-60 Oe), at room temperature, over which magnetization in one contact is aligned antiparallel to that in the other. The MOKE results are consistent with the variation of the magnetoresistance in the spin-injection device. © 1999 American Institute of Physics.

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