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Photoluminescence-induced oscillations in porous anodic aluminum oxide films grown on Si: Effect of the interface and porosity

Citation:

Gardelis S, Nassiopoulou AG, Gianneta V, Theodoropoulou M. Photoluminescence-induced oscillations in porous anodic aluminum oxide films grown on Si: Effect of the interface and porosity. Journal of Applied Physics [Internet]. 2010;107.

Abstract:

We report that porous anodic alumina (aluminum oxide: Al2O 3) (PAA) thin films directly grown on Si show clear oscillations in their photoluminescence (PL) spectra which are ascribed to PL-induced interferences within the Fabry-Ṕrot optical cavity formed by the PAA film on Si, that involve the air/oxide and oxide/Si interfaces. The existence of the PL-induced oscillations is indicative of the high quality of the interface of the PAA film with Si, which is both planar and smooth. We show that by using these oscillations we can develop a sensitive optical method of measuring the porosity of PAA thin films on Si if we know the film thickness. The method is based on the calculation of the effective refractive index of the PAA film derived from the PL-induced oscillations, which is then introduced into the Bruggeman equation in order to derive the porosity of the film. © 2010 American Institute of Physics.

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