Abstract:

The optical properties of ultra thin anodic silicon layers containing silicon nanocrystals were investigated by photoluminescence spectroscopy and Fourier transform infrared absorption spectroscopy. The films were grown by electrochemical dissolution of bulk crystalline silicon at the early stages of anodization using short monopulses of anodic currents ranging from the regime of porous silicon formation to the transition regime between porosification and electropolishing. The conditions for obtaining light emitting films and the origin of light emission will be discussed. © 2007 American Institute of Physics.

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