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Light-emission characteristics of silicon nanocrystals formed by anodization of bulk crystalline silicon in the transition regime

Citation:

Gardelis S, Nassiopoulou AG. Light-emission characteristics of silicon nanocrystals formed by anodization of bulk crystalline silicon in the transition regime. Physica Status Solidi (C) Current Topics in Solid State Physics [Internet]. 2007;4:2165-2169.

Abstract:

In this study we report on the light-emission characteristics of Si nanocrystals formed at the initial stages of anodization of bulk crystalline Si in the transition regime using extremely short pulses of anodic current. A considerable enhancement and a red-shift of the photoluminescence (PL) peak of the as-grown films under prolonged laser illumination in atmosphere was observed. Ageing or thermal oxidation in atmosphere at 300 °C caused similar red-shift and significant enhancement of PL relative to the as-grown films. In all cases the enhancement and the red-shift of the PL coincided with the appearance of O2-Si-H2 and O2-Si-H(OH) stretching modes in the Fourier-Transform-Infra-Red (FTIR) absorption spectra. Oxidation in dry oxygen at 900 °C caused red-shift of PL without enhancement. Finally removal of the oxide caused blue shift of PL. All these observations are discussed in the context of the quantum confinement model. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.

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