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Sharp 1.54μm luminescence from porous erbium implanted silicon

Citation:

Taskin T, Gardelis S, Evans JH, Hamilton B, Peaker AR. Sharp 1.54μm luminescence from porous erbium implanted silicon. Electronics Letters [Internet]. 1995;31:2132-2133.

Abstract:

Sharp luminescence at 1.54μm from erbium doped porous silicon has been observed. The silicon was made porous after implantation of high doses of erbium and oxygen into p-type Czochralski silicon. The erbium related luminescence from porous silicon is an order of magnitude more intense than that from erbium doped single crystal silicon. © 1995, IEE. All rights reserved.

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