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A silicon-wafer based p-n junction solar cell by aluminum-induced recrystallization and doping

Citation:

Gardelis S, Nassiopoulou AG, Manousiadis P, Vouroutzis N, Frangis N. A silicon-wafer based p-n junction solar cell by aluminum-induced recrystallization and doping. Applied Physics Letters [Internet]. 2013;103.

Abstract:

We fabricated a silicon-wafer based p-n junction solar cell with conversion efficiency of 11% without conventional doping of the emitter or the use of anti-reflecting coatings. The emitter was originally nanocrystalline, grown on n-type crystalline Si and covered with a thin semi-transparent Al layer. Annealing in nitrogen at 430 °C promoted a simultaneous aluminum (Al)-induced recrystallization and Al-doping of the emitter. The recrystallized emitter consisted of considerably larger Si grains which were epitaxially crystallized on the Si substrate. These two effects led to a considerable improvement of the electrical and photovoltaic properties of the resulting p-n junction. © 2013 AIP Publishing LLC.

Notes:

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